DESCRIPTION
Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. D G S ABSOLUTE MAXIMUM RATINGS
Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Rating 20 ±12 5.8 4.7 20 1.6 0.013 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Gate-Source Voltage Continuous Drain Current3, VGS @ 4.5V Continuous Drain Current , VGS @ 4.5V Pulsed Drain Current 1,2 3 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Max. Value 78 Unit ℃/W Data and specifications subject to change without notice 200118052 Datasheet pdf - AP1802GU ELECTRICAL CHARACTERISTICS
@Tj=25oC(unless otherwise specified ) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min . Typ . Max . Units 20 0.5 0.02 13 9...
Advanced Power Electronics
