DESCRIPTION
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G D S G D S TO-252(H) TO-251(J) ABSOLUTE MAXIMUM RATINGS
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 200 ± 20 18 9.5 60 89 0.7 Units V V A A A W W/ ℃ W ℃ ℃ Total Power Dissipation Linear Derating Factor Total Power Dissipation 3 2 -55 to 150 -55 to 150 Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount) 3 Value 1.4 62.5 110 Unit ℃/W ℃/W ℃/W 1 201006224 Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice AP18N20GH/J-HF ELECTRICAL CHARACTERISTICS
@Tj=25 C(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj o Parameter Drain-Source Breakdown Voltage Test Conditions Min.
Advanced Power Electronics
