AP18N20GP-HF Datasheet PDF | Advanced Power Electronics

Advanced Power Electronics AP18N20GP-HF

The TO-263 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance. The through-hole version (AP18N20GP) are available for low-profile applications.

Part No.	AP18N20GP-HF
Datasheet	AP18N20GP-HF Download
Manufacturer	Advanced Power Electronics
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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DESCRIPTION

AP18N20 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. G DS TO-220(P) G D S TO-263(S)

ABSOLUTE MAXIMUM RATINGS

@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units VDS Drain-Source Voltage 200 V VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ Gate-Source Voltage Drain Current, VGS @ 10V Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation +20 V 18 A 9.5 A 60 A 89 W Linear Derating Factor 0.7 W/℃ TSTG TJ Storage Temperature Range Operating Junction Temperature Range -55 to 150 -55 to 150 ℃ ℃ Thermal Data Symbol Parameter Rthj-c Rthj-a Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount)3 Rthj-a Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice Value...