Advanced Power Electronics AP20G45EH
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
| Part No. | AP20G45EH |
|---|---|
| Datasheet | AP20G45EH Download |
| Manufacturer |  Advanced Power Electronics |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
* High Input Impedance * High Pick Current Capability * 4.5V Gate Drive * Strobe FlashAPPLICATIONS
G C E TO-252(H) G C E TO-251(J) VCES ICP GABSOLUTE MAXIMUM RATINGS
Symbol Parameter VCES Collector-Emitter Voltage VGE Gate-Emitter Voltage IGEP Pulsed Gate-Emitter Voltage ICP PD@TC=25℃ Pulsed Collector Current Maximum Power Dissipation TSTG Storage Temperature Range TJ Operating Junction Temperature Range Rating 450 ±6 ±8 130 20 -55 to 150 -55 to 150 450V 130A C E Units V V V A W ℃ ℃ELECTRICAL CHARACTERISTICS
@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. IGES Gate-Emitter Leakage Current VGE=6V, VCE=0V - - 10 ICES Collector-Emitter Leakage Current (Tj=25℃) VCE=450V, VGE=0V - - 10 VCE(sat) Collector-Emitter Saturation Voltage VGE=4.5V, ICP=130A (Pulsed) - 58 VGE(th) Gate Threshold Voltage VCE=VGE, IC=250uA - - 1.2 Qg Total Gate Charge IC=40A - 51 - Qge Gate-Emitter Charge VCE=300V -2- Qgc Gate-Collector Charge VGE=5V - 5.4 - td(on) Tur...
