AP2309N Datasheet PDF | Advanced Power Electronics

Advanced Power Electronics AP2309N

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, , low on-resistance and cost-effectiveness. The SOT-23 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters.

Part No.	AP2309N
Datasheet	AP2309N Download
Manufacturer	Advanced Power Electronics
Description	P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Buy	Stock & Price

DESCRIPTION

SOT-23 G D G S

ABSOLUTE MAXIMUM RATINGS

Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1,2 3 3 Parameter Rating - 30 ±20 - 3.7 -3 -12 1.38 0.01 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Continuous Drain Current Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 90 Unit ℃/W Data and specifications subject to change without notice 200513041 AP2309N

ELECTRICAL CHARACTERISTICS

@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=-250uA Min. -30 -1 - Typ. -0.02 5 5 1 3 8 5 20 7 412 91 62 Max. Units 75 120 -3 -1 -25 ±100 8 660 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA RDS(ON) Static...