DESCRIPTION
AP2319 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. BVDSS RDS(ON) ID G -30V 90mΩ -3.1A D S ABSOLUTE MAXIMUM RATINGS
@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units VDS Drain-Source Voltage - 30 V VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Gate-Source Voltage Drain Current3, VGS @ 10V Drain Current3, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range +20 V -3.1 A -2.5 A -12 A 1.38 W -55 to 150 ℃ -55 to 150 ℃ Thermal Data Symbol Rthj-amb Parameter Maximum Thermal Resistance, Junction-ambient3 Data and specifications subject to change without notice Value 90 Unit ℃/W 1 201501212 AP2319GN-HF ELECTRICAL CHARACTERISTICS
@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min.
Advanced Power Electronics
