DESCRIPTION
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G1 D1 G2 S1 S2 D1 D1 D2 D2 D2 D1 S1 G1 S2 G2 DFN 3x3 ABSOLUTE MAXIMUM RATINGS
Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS @ 10V Continuous Drain Current , VGS @ 10V Pulsed Drain Current 1 3 3 Rating 30 +20 10.5 8.4 30 3.1 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient 3 Rating 40 Units ℃/W 1 201210042 Data & specifications subject to change without notice Datasheet pdf - AP2434GN3-HF ELECTRICAL CHARACTERISTICS
@Tj=25 C(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Test Conditi...
Advanced Power Electronics
