Advanced Power Electronics AP25N10GJ-HF
The TO-252 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance. The through-hole version (AP25N10GJ) are available for low-profile applications.| Part No. | AP25N10GJ-HF |
|---|---|
| Datasheet | AP25N10GJ-HF Download |
| Manufacturer |  Advanced Power Electronics |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
AP25N10 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. G D S TO-252(H) G D S TO-251(J)ABSOLUTE MAXIMUM RATINGS
@Tj=25oC. (unless otherwise specified) Symbol Parameter Rating Units VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ D
