Advanced Power Electronics AP28G40GEM-HF
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
| Part No. | AP28G40GEM-HF |
|---|---|
| Datasheet | AP28G40GEM-HF Download |
| Manufacturer |  Advanced Power Electronics |
| Description | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
| Buy | Stock & Price |
APPLICATIONS
▼ RoHS Compliant & Halogen-Free C C C C SO-8 VCE ICP G E EE G 400V 150A C EABSOLUTE MAXIMUM RATINGS
@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units VCE VGEP ICP PD@TA=25℃1 TSTG TJ Collector-Emitter Voltage Peak Gate-Emitter Voltage Pulsed Collector Current, VGE @ 3V Maximum Power Dissipation Storage Temperature Range Operating Junction Temperature Range . 400 +6 150 1 -55 to 150 150 V V A W oC oCELECTRICAL CHARACTERISTICS
@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units IGES ICES VCE(sat) VGE(th) Qg Qge Qgc td(on) tr td(off) tf Cies Coes Cres RthJA1 Gate-Emitter Leakage Current VGE=+6V, VCE=0V Collector-Emitter Leakage Current VCE=400V, VGE=0V Collector-Emitter Saturation Voltage Gate Threshold Voltage Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance VGE=3V, ICP=150A (Pulsed) VCE=VGE, IC=250uA IC=40A VCE=200...
