AP2900EC4 Datasheet PDF | Advanced Power Electronics

Advanced Power Electronics AP2900EC4

AP2900EC4 IS , Source Current (A) RSS(ON) (mΩ) 10 T A = 25 o C 8 6 4.5V 4.0V 3.5V 3.0V 2.5V V GS =2.0V 4 2 0 0 0.4 0.8 1.2 1.6 2 V SS , Source-to-Source Voltage (V) Fig 1. Gate Charge Characteristics 5 IS, Source Current (A) AP2900EC4 IS , Source Current (A) 10 V SS =10V 8 6 T j =150 o C 4 T j =25 o C T j =-55 o C 2 0 012 V GS , Gate-to-Source Voltage

Part No.	AP2900EC4
Datasheet	AP2900EC4 Download
Manufacturer	Advanced Power Electronics
Description	DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Buy	Stock & Price

DESCRIPTION

AP2900 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for the load switch, charge switch, battery switch for portable application. WLCSP 4 ball 1. 59mm + 0.02mm 0.65mm . 1.59mm ± 0. 02mm Top view 0.6 5m m G2 S2 G1 S1 Bottom view 0.225 mm 0.165mm 0.3mm G1 G2 S1 S2

ABSOLUTE MAXIMUM RATINGS

@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units VSSS 24 V VGSS +12 V IS ISM PD@TA=25℃ TSTG TJ Source Current Pulsed Source Current1 Total Power Dissipation3 Storage Temperature Range Junction Temperature 9 60 1.6 -55 to 150 -55 to 150 A A W ℃ ℃ Data and specifications subject to change without notice 1 201502241 AP2900EC4

ELECTRICAL CHARACTERISTICS

@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units V(BR)SSS RSS(ON) VGS(off) 丨yfs丨 ISSS IGSS td(on) tr td(off) tf Qg VF(S-S)...