Advanced Power Electronics AP30G100W
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
| Part No. | AP30G100W |
|---|---|
| Datasheet | AP30G100W Download |
| Manufacturer |  Advanced Power Electronics |
| Description | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
| Buy | Stock & Price |
FEATURES
▼ High speed switching ▼ Low Saturation Voltage VCE(sat)=3.0V@IC=30A ▼ Industry Standard TO-3P Package ▼ RoHS Compliant G C E TO-3PABSOLUTE MAXIMUM RATINGS
Symbol Parameter VCES VGE IC@TC=25℃ IC@TC=100℃ ICM PD@TC=25℃ TSTG TJ TL Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current1 Maximum Power Dissipation Storage Temperature Range Operating Junction Temperature Range Maximum Lead Temp. for Soldering Purposes , 1/8" from case for 5 seconds . Notes: 1.Repetitive rating : Pulse width limited by max . junction temperature . VCES IC G Rating 1000 ±30 60 30 120 208 -55 to 150 -55 to 150 300 1000V 30A C E Units V V A A A W ℃ ℃ ℃ Thermal Data Symbol Parameter Rthj-c Thermal Resistance Junction-Case Rthj-a Thermal Resistance Junction-Ambient Value 0.6 40 Units ℃/W ℃/WELECTRICAL CHARACTERISTICS
@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions BVCES IGES ICES VCE(sat) VGE(th) Qg Qge Qgc td...
