Advanced Power Electronics AP30P10GI
The TO-220CFM package is widely preferred for all commercialindustrial through hole applications. The mold compound provides a high isolation voltage capability and low thermal resistance between the tab and the external heat-sink.| Part No. | AP30P10GI |
|---|---|
| Datasheet | AP30P10GI Download |
| Manufacturer |  Advanced Power Electronics |
| Description | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
AP30P10 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. BVDSS RDS(ON) ID3 -100V 80mΩ -25A G D S TO-220CFM(I) Absolute Symbol Maximum RatingPsa@ramTej=te2r 5oC. (unless otherwise specified) Rating Units VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ Drain-Source Voltage Gate-Source Voltage Dra
