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AP30P10GS-HF Datasheet PDF

Advanced Power Electronics AP30P10GS-HF

The TO-263 package is widely preferred for all commercialindustrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance.
Part No. AP30P10GS-HF
Datasheet AP30P10GS-HF Download
Manufacturer
Advanced Power Electronics
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
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AP30P10GS-HF datasheet page 1 preview

DESCRIPTION

AP30P10 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. D S BVDSS RDS(ON) ID -100V 80mΩ -25A GD S TO-263(S)

ABSOLUTE MAXIMUM RATINGS

@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage Drain Current, VGS @ 10V Dra
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