DESCRIPTION
AP436N00420sesreierisesaarerefrforommAAddvvaanncceedd PPoowweerr iinnnnoovvaatteedd design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. BVDSS RDS(ON) ID 30V 20mΩ 23.3A G D S TO-220(P) Absolute Symbol Maximum RatingPsa@ramTej=te2r 5oC. (unless otherwise specified) Rating Units VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ Drain-Source Voltage Gate-Source Voltage Drain Current, VGS @ 10V Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation 30 V +20 V 23.3 A 14.7 A 80 A 17.8 W PD@TA=25℃ EAS TSTG Total Power Dissipation Single Pulse Avalanche Energy3 Storage Temperature Range 2 3.2 -55 to 150 W mJ ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifica...
Advanced Power Electronics
