AP40P03GI-HF Datasheet PDF | Advanced Power Electronics

Advanced Power Electronics AP40P03GI-HF

The TO-220CFM package is widely preferred for all commercialindustrial through hole applications. The mold compound provides a high isolation voltage capability and low thermal resistance between the tab and the external heat-sink.

Part No.	AP40P03GI-HF
Datasheet	AP40P03GI-HF Download
Manufacturer	Advanced Power Electronics
Description	P-CHANNEL ENHANCEMENT MODE POWER MOSFET
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DESCRIPTION

AP40P03 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. BVDSS RDS(ON) ID -30V 28mΩ -30A G D S TO-220CFM(I)

ABSOLUTE MAXIMUM RATINGS

@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units VDS Drain-Source Voltage -30 V VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ Gate-Source Voltage Drain Current, VGS @ 10V Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor +20 -30 -18 -120 31.3 0.25 V A A A W W/℃ TSTG TJ Storage Temperature Range Operating Junction Temperature Range -55 to 150 -55 to 150 ℃ ℃ Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice Value 4 65 Units ℃/W ℃/W 1 201501294 AP40P03GI-HF

ELECTRICAL CHARACTERISTICS

@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min.