AP40T03GI Datasheet PDF | Advanced Power Electronics

Advanced Power Electronics AP40T03GI

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220CFM TO-252 package isolation is universally package preferred is universally for all preferred commercialfor all industrial surface mount commercial-industrial through applications hole applications.

Part No.	AP40T03GI
Datasheet	AP40T03GI Download
Manufacturer	Advanced Power Electronics
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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DESCRIPTION

and suited for low voltage G D S TO-220CFM(I)

ABSOLUTE MAXIMUM RATINGS

Symbol VDS VGS ID@TA=25℃ ID@TA=100℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 30 ±25 28 18 95 25 0.2 -55 to 150 -55 to 150 Units V V A A A W W/℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 5 62 Units ℃/W ℃/W Data and specifications subject to change without notice 201121051-1/4 AP40T03GI

ELECTRICAL CHARACTERISTICS

@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 30 1 - Typ. 0.02 16 9 2 6 7 56 16 5 610 160 117 1.5 Max. Units 25 45 3 1 25 ±100 15 980 2.3 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Ω Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=18A VGS=4.