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AP4226AGM Datasheet PDF

Advanced Power Electronics AP4226AGM

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
Part No. AP4226AGM
Datasheet AP4226AGM Download
Manufacturer
Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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AP4226AGM datasheet page 1 preview

DESCRIPTION

D1 D2 G1 S1 G2 S2

ABSOLUTE MAXIMUM RATINGS

Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 30 ±20 8.7 7 40 2 0.016 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 62.5 Unit ℃/W Data and specifications subject to change without notice 200508061-1/4 AP4226AGM

ELECTRICAL CHARACTERISTICS

@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage 2 Test Conditions VGS=0V, ID=250uA Min. 30 1 - Typ. 0.01 8 14.5 2.3 7.7 7.2 8.6 24.8 8.6 950 220 160 1 Max. Units 18 24 3 1 25 ±100 23 1420 1.5 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Ω Breakdown Voltage Temperature Coefficient Reference to 25℃,...
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