AP42T03GP Datasheet PDF | Advanced Power Electronics

Advanced Power Electronics AP42T03GP

The Advanced Advanced Power Power MOSFETs MOSFETs fromfrom APEC APEC provide provide the the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is widely preferred for commercial-industrial power applications and suited for low voltage applications such as DC/DC converters.

Part No.	AP42T03GP
Datasheet	AP42T03GP Download
Manufacturer	Advanced Power Electronics
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Buy	Stock & Price

DESCRIPTION

G D TO-220(P) S

ABSOLUTE MAXIMUM RATINGS

Symbol VDS VGS ID@Tc=25℃ ID@Tc=100℃ IDM PD@Tc=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 30 +20 30 18 120 27.8 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 4.5 62 Units ℃/W ℃/W Data and specifications subject to change without notice 1 200811271 AP42T03GP

ELECTRICAL CHARACTERISTICS

@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Test Conditions VGS=0V, ID=250uA VGS=10V, ID=18A VGS=4.5V, ID=14A Min. 30 1 - Typ. 20 8 2.5 4.5 7.5 55 17 5.5 615 150 100 Max. Units 22 35 3 1 25 +100 13 980 V mΩ mΩ V S uA uA nA nC nC...