AP4407GM Datasheet PDF | Advanced Power Electronics

Advanced Power Electronics AP4407GM

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.

Part No.	AP4407GM
Datasheet	AP4407GM Download
Manufacturer	Advanced Power Electronics
Description	P-CHANNEL ENHANCEMENT MODE POWER MOSFET
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DESCRIPTION

D G S

ABSOLUTE MAXIMUM RATINGS

Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating -30 ± 25 -10.7 -8.6 -50 2.5 0.02 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 50 Unit ℃/W Data and specifications subject to change without notice 201125031 AP4407GM

ELECTRICAL CHARACTERISTICS

@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj RDS(ON) Parameter Drain-Source Breakdown Voltage Test Conditions Min. -30 -1 - Typ. -0.015 Max. Units 14 20 -3 -1 -25 ±100 46 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF VGS=0V, ID=-250uA Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA Static Drain-Source On-Resistance Gate Thresh...