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AP4417GH Datasheet PDF

Advanced Power Electronics AP4417GH

The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP4417GJ) is available for low-profile applications.
Part No. AP4417GH
Datasheet AP4417GH Download
Manufacturer
Advanced Power Electronics
Description ENHANCEMENT MODE POWER MOSFET
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AP4417GH datasheet page 1 preview

DESCRIPTION

G G D S TO-252(H) D S TO-251(J)

ABSOLUTE MAXIMUM RATINGS

Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating -35 ±20 -15 -9 -40 26 0.21 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 4.8 110 Units ℃/W ℃/W Data and specifications subject to change without notice 200411051-1/4 AP4417GH/J

ELECTRICAL CHARACTERISTICS

@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=-250uA 2 Min. -35 -1 - Typ. -0.03 9 6 1.4 3.5 6 18 17 4 400 95 70 6 Max. Units 75 110 -3 -1 -25 ±100 10 640 9 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns...
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