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AP4435GM Datasheet PDF

Advanced Power Electronics AP4435GM

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters.
Part No. AP4435GM
Datasheet AP4435GM Download
Manufacturer
Advanced Power Electronics
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
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AP4435GM datasheet page 1 preview

DESCRIPTION

D G S

ABSOLUTE MAXIMUM RATINGS

Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1,2 3 3 Rating - 30 ± 20 -8 -6 -50 2.5 0.02 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient Max. Value 50 Unit ℃/W Data and specifications subject to change without notice 201124043 AP4435GM

ELECTRICAL CHARACTERISTICS

@Tj=25 C(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj o Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=-250uA Min. -30 -1 - Typ. -0.04 15 26 20 36 5.5 3.5 12 8 75 40 1530 900 280 6 Max. Units 20 32 -3 -1 -25 ±100 9 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Ω Breakdown Voltage Temperature Coefficient Reference to 25 ℃, ID=-1mA RDS(ON)...
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