Advanced Power Electronics AP4501AGEY-HF
The 2928-8 J-lead package provides good on-resistance performance and space saving like TSOP-6.| Part No. | AP4501AGEY-HF |
|---|---|
| Datasheet | AP4501AGEY-HF Download |
| Manufacturer |  Advanced Power Electronics |
| Description | N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
AP4501A series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. G1 BVDSS RDS(ON) ID BVDSS RDS(ON) ID D1 1 G2 S1 30V 20mΩ 6.5A -30V 45mΩ -4.5A D2 S2ABSOLUTE MAXIMUM RATINGS
@Tj=25oC. (unless otherwise specified) Symbol Parameter Rating Units N-channel P-channel VDS Drain-Source Voltage 30 -30 V VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range +20 +20 6.5 -4.5 5.2 -3.6 30 -20 1.38 -55 to 150 -55 to 150 V A A A W ℃ ℃ Thermal Data Symbol Parameter Rthj-a Maximum Thermal Resistance, Junction-ambient3 Data and specifications subject to change without notice Value 90 Unit ℃/W 1 201410023AP AP4501AGEY-HF N-CHELECTRICAL CHARACTERISTICS
@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min.
