DESCRIPTION
AP4501SSD included N , P channel enhancement mode power MOSFET and Shottky diode. G1 D2 G2 S1 A S2 ABSOLUTE MAXIMUM RATINGS
Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating N-channel 30 ±20 5.3 4.3 40 2 0.016 -55 to 150 -55 to 125 P-channel -30 ±20 -4.2 -3.5 -30 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient 3 Value Max. 62.5 Unit ℃/W Data and specifications subject to change without notice 200221031 AP4501SSD N-CH ELECTRICAL CHARACTERISTICS
@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage 2 Test Conditions VGS=0V, ID=250uA Min. 30 1 - Typ. 0.031 Max. Units 36 55 3 100 1 ±100 V V/℃ mΩ mΩ V S uA mA nA nC nC nC ns ns ns ns...
Advanced Power Electronics
