DESCRIPTION
AP4800 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. BVDSS RDS(ON) ID G 30V 18mΩ 9.2A D S ABSOLUTE MAXIMUM RATINGS
@Tj=25oC(unless otherwise specified) Symbol VDS .Parameter Drain-Source Voltage Rating 30 Units V VGS Gate-Source Voltage +20 V ID@TA=25℃ ID@TA=70℃ Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V3 9.2 A 7.3 A IDM Pulsed Drain Current1 50 A PD@TA=25℃ Total Power Dissipation 2.5 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Rthj-a Maximum Thermal Resistance, Junction-ambient3 Data and specifications subject to change without notice Value 50 Unit ℃/W 1 201408181 AP4800GEM ELECTRICAL CHARACTERISTICS
@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ.
Advanced Power Electronics
