Advanced Power Electronics AP50G60SW-HF
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
| Part No. | AP50G60SW-HF |
|---|---|
| Datasheet | AP50G60SW-HF Download |
| Manufacturer |  Advanced Power Electronics |
| Description | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
| Buy | Stock & Price |
FEATURES
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR C ▼ High Speed Switching ▼ Low Saturation Voltage VCE(sat),Typ.=2.6V@IC=33A ▼ Built-in Fast Recovery Diode ▼ RoHS Compliant & Halogen-Free VCES IC 600V 45A C G C E TO-3P G EABSOLUTE MAXIMUM RATINGS
Symbol VCES VGE IC@TC=25oC IC@TC=100oC ICM IF@TC=25oC IF@TC=100oC PD@TC=25oC TSTG TJ TL Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Forward Current Diode Forward Current Maximum Power Dissipation Storage Temperature Range Operating Junction Temperature Range Maximum Lead Temp. for Soldering Purposes , 1/8" from case for 5 seconds . Parameter Collector-Emitter Voltage Rating 600 +30 75 45 150 40 15 300 -55 to 150 150 300 Units V V A A A A A W o o o C C C Notes: 1.Pulse width limited by max. junction temperature . Thermal Data Symbol Rthj-c Rthj-c(Diode) Rthj-a Thermal Resistance Junction-Case Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Parameter Value 0.42 1.5 40 Units o...
