AP60N03GP Datasheet PDF | Advanced Power Electronics

Advanced Power Electronics AP60N03GP

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters.

Part No.	AP60N03GP
Datasheet	AP60N03GP Download
Manufacturer	Advanced Power Electronics
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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DESCRIPTION

The through-hole version (AP60N03GP) is available for low-profile applications. GD S TO-263(S) G D TO-220(P)

ABSOLUTE MAXIMUM RATINGS

Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 30 ±20 55 35 215 62.5 0.5 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 2.0 62 Units ℃/W ℃/W Data & specifications subject to change without notice 201221041 AP60N03GS/P

ELECTRICAL CHARACTERISTICS

@Tj=25 C(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj o Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 30 1 - Typ. 0.037 11.5 18 30 22.4 2.7 14 7.4 81 24 18 950 440 145 Max.

AP60N03GP Datasheets by Manufacturer

1 datasheets

Part Number	Manufacturer
AP60N03GP	Advanced Power Electronics