DESCRIPTION
AP65PN1R4 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. BVDSS RDS(ON) ID G DS 650V 1.45Ω 7A TO-220(P) ABSOLUTE MAXIMUM RATINGS
@Tj=25o.C(unless otherwise specified) Symbol Parameter Rating Units VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ PD@TA=25℃ EAS TSTG TJ Drain-Source Voltage Gate-Source Voltage Drain Current, VGS @ 10V Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Total Power Dissipation Single Pulse Avalanche Energy3 Storage Temperature Range Operating Junction Temperature Range 650 +30 7 3.3 16 104 2 13.5 -55 to 150 -55 to 150 V V A A A W W mJ ℃ ℃ Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice Val...
Advanced Power Electronics
