DESCRIPTION
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. ® D D D D S S S G ® PMPAK 5x6 ABSOLUTE MAXIMUM RATINGS
Symbol VDS VGS ID@TC=25℃ ID@TA=25℃ ID@TA=70℃ IDM PD@TC=25℃ PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Chip), V GS @ 10V Continuous Drain Current , VGS @ 10V Continuous Drain Current , VGS @ 10V Pulsed Drain Current 1 3 3 Rating -30 +20 -135 -33 -26.4 -200 83.3 5 -55 to 150 -55 to 150 Units V V A A A A W W ℃ ℃ Total Power Dissipation Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient 3 Value 1.5 25 Unit ℃/W ℃/W 1 201211221 Data and specifications subject to change without notice Free Datasheet AP6681GMT-HF ELECTRICAL CHARACTERISTICS
@Tj=25 C(un...
Advanced Power Electronics
