DESCRIPTION
AP70SL250A series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. VDS @ Tj,max. RDS(ON) ID3 750V 0.25Ω 15A G D S TO-263(S) . ABSOLUTE MAXIMUM RATINGS
@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units VDS VGS ID@TC=25℃ ID@TC=100℃ IDM dv/dt PD@TC=25℃ PD@TA=25℃ EAS dv/dt Drain-Source Voltage Gate-Source Voltage Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V3 Pulsed Drain Current1 MOSFET dv/dt Ruggedness (VDS = 0 …400V ) Total Power Dissipation Total Power Dissipation4 Single Pulse Avalanche Energy5 Peak Diode Recovery dv/dt6 700 +20 15 9.6 38 50 152 3.12 168 15 V V A A A V/ns W W mJ V/ns TSTG TJ Storage Temperature Range Operating Junction Temperature Range -55 to 150 -55 to 150 ℃ ℃ Thermal Data Symbol Parameter Rthj-c Rthj-a Maximum Thermal Resistance, Ju...
Advanced Power Electronics
