DESCRIPTION
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. G D TO-220 (P) S ABSOLUTE MAXIMUM RATINGS
Symbol VDS VGS ID at TC=25°C ID at TC=100°C IDM PD at TC=25°C EAS IAR EAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Rating 400 ±30 5.5 3.5 23 74 0.59 2 Units V V A A A W W/°C mJ A mJ °C °C Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Storage Temperature Range Operating Junction Temperature Range 260 5.5 7 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance Junction-case Maximum Thermal Resistance Junction-ambient Value 1.7 62 Unit °C/W °C/W Ordering Information AP730P-HF-3TB RoHS-compliant halogen-free TO-220, shipped in tubes ©2010 Advanced Power Electronics Corp. USA 200302192-3 1/7 Advanced Power Electronics Corp.