AP85T03GH Datasheet PDF | Advanced Power Electronics

Advanced Power Electronics AP85T03GH

The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP85T03GJ) is available for low-profile applications.

Part No.	AP85T03GH
Datasheet	AP85T03GH Download
Manufacturer	Advanced Power Electronics
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Buy	Stock & Price

DESCRIPTION

G D S TO-252(H) G D S TO-251(J)

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor TSTG Storage Temperature Range TJ Operating Junction Temperature Range Thermal Data Symbol Parameter Rthj-c Thermal Resistance Junction-case Rthj-a Thermal Resistance Junction-ambient Rating 30 ±20 75 55 350 107 0.7 -55 to 175 -55 to 175 Units V V A A A W W/℃ ℃ ℃ Max. Max. Value 1.4 110 Units ℃/W ℃/W Data & specifications subject to change without notice 200823053-1/4 AP85T03GH/J

ELECTRICAL CHARACTERISTICS

@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS ΔBVDSS/ΔTj RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd Qoss td(on) tr td(off) tf Ciss Coss Crss Drain-Source Breakdown Voltage VGS=0V, ID=250uA Breakdown Voltage Temperature Coefficien...