DESCRIPTION
AP85T10 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. G D S TO-262(R) ABSOLUTE MAXIMUM RATINGS
Symbol VDS VGS ID@TC=25℃ ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Chip) Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 3 Rating 100 +20 125 120 88 300 300 2.42 -55 to 175 -55 to 175 Units V V A A A A W W ℃ ℃ Total Power Dissipation Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 0.5 62 Units ℃/W ℃/W 1 201210291 Data and specifications subject to change without n...
Advanced Power Electronics
