AP85U03GMT Datasheet PDF | Advanced Power Electronics

Advanced Power Electronics AP85U03GMT

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low□ on-resistance and cost-effectiveness. The GEMPAK package is special for DC-DC converters application and the foot print is compatible with SO-8 with backside heat sink.

Part No.	AP85U03GMT
Datasheet	AP85U03GMT Download
Manufacturer	Advanced Power Electronics
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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DESCRIPTION

S S S D D G GEMPAK

ABSOLUTE MAXIMUM RATINGS

Symbol VDS VGS ID@TC=25℃ ID@TA=25℃ ID@TA=100℃ IDM PD@TC=25℃ PD@TA=25℃ EAS TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Continuous Drain Current Pulsed Drain Current1 Total Power Dissipation Total Power Dissipation Single Pulse Avalanche Energy Storage Temperature Range Operating Junction Temperature Range 4 3 3 Rating 30 ±20 82 24 15 200 50 5 57.6 -55 to 150 -55 to 150 Units V V A A A A W W mJ ℃ ℃ Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient 3 Max. Max. Value 2.5 25 Units ℃/W ℃/W Data & specifications subject to change without notice 201008072-1/4 AP85U03GMT

ELECTRICAL CHARACTERISTICS

@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Test Conditions VGS=0V, ID=250uA VGS=10V, ID=20A VGS=4.5V, ID=20A Min. 30 1 - Typ. 19.5 29 6.4 19 10 84 27 83 395 390 1.2 Max.