Advanced Power Electronics AP9435GG-HF
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
DESCRIPTION
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. D S SOT-89 D GABSOLUTE MAXIMUM RATINGS
Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 3 3 Rating - 30 +20 - 4.2 -3.4 -20 1.25 0.01 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient 3 Value 100 Unit ℃/W 1 201010053 Data and specifications subject to change without notice AP9435GG-HFELECTRICAL CHARACTERISTICS
@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V,...