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AP9563GK Datasheet PDF

Advanced Power Electronics AP9563GK

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.
Part No. AP9563GK
Datasheet AP9563GK Download
Manufacturer
Advanced Power Electronics
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
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AP9563GK datasheet page 1 preview

DESCRIPTION

D G S

ABSOLUTE MAXIMUM RATINGS

Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating -40 ±25 -6.8 -5.4 -30 2.8 0.02 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 45 Unit ℃/W Data and specifications subject to change without notice 200914051-1/4 AP9563GK

ELECTRICAL CHARACTERISTICS

@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=-250uA 2 Min. -40 -1 - Typ. -0.03 10 20 4 10 12 6 70 36 240 185 5.8 Max. Units 40 60 -3 -1 -25 ±100 30 8.7 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Ω Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA RDS(ON) St...
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