Advanced Power Electronics AP9926GEM
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.| Part No. | AP9926GEM |
|---|---|
| Datasheet | AP9926GEM Download |
| Manufacturer |  Advanced Power Electronics |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
D1 G1 G2 D2 S1 S2ABSOLUTE MAXIMUM RATINGS
Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 20 ±12 6 4.8 20 2 0.016 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Continuous Drain Current Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient 3 Value Max. 62.5 Unit ℃/W Data and specifications subject to change without notice 20112002 AP9926GEMELECTRICAL CHARACTERISTICS
@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=250uA Min. 20 0.5 - Typ. 0.1 15.6 12.5 1 6.5 5 9 26.2 6.8 355 190 85 Max. Units 30 45 1 25 ±10 V V/℃ mΩ mΩ V S uA uA uA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference...
