Advanced Power Electronics AP9934GM
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. The SO-8 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters.| Part No. | AP9934GM |
|---|---|
| Datasheet | AP9934GM Download |
| Manufacturer |  Advanced Power Electronics |
| Description | POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
N1G P2G P1N1D P2N2D N2G N1S N2SABSOLUTE MAXIMUM RATINGS
Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating N-channel 35 ± 20 4.3 3.4 20 1.38 0.01 -55 to 150 -55 to 150 P-channel -35 ± 20 -3.6 -2.8 -20 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 90 Unit ℃/W Data and specifications subject to change without notice 200920041 AP9934GM N-CHELECTRICAL CHARACTERISTICS
@Tj=25 C(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj o Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 35 1 - Typ. 0.03 8 6 2 3 6 5 14 4 490 130 55 Max. Units 48 70 3 1 25 ±100 10 780 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Tempera...
