DESCRIPTION
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G2 S2 G1 S1 G1 BVDSS RDS(ON) ID D1 G2 S1 40V 25mΩ 7A D2 S2 ABSOLUTE MAXIMUM RATINGS
Symbol Parameter VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS @ 10V Continuous Drain Current3, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor TSTG TJ Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Parameter Rthj-a Maximum Thermal Resistance, Junction-ambient3 Rating 40 ± 20 7 5.5 20 2 0.016 -55 to 150 -55 to 150 Value 62.5 Units V V A A A W W/℃ ℃ ℃ Unit ℃/W Data and specifications subject to change without notice 1 200810282 AP9962AGM ELECTRICAL CHARACTERISTICS
@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg...
Advanced Power Electronics
