DESCRIPTION
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. G D S TO-252(H) G D S TO-251(J) ABSOLUTE MAXIMUM RATINGS
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 60 +20 25 16 80 39 0.31 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount) 3 Value 3.2 62.5 110 Unit ℃/W ℃/W ℃/W 1 200902243 Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice AP9971GH/J ELECTRICAL CHARACTERISTICS
@Tj=25oC(unless otherwise specif...
Advanced Power Electronics
