DESCRIPTION
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. G D S TO-220CFM (I) ABSOLUTE MAXIMUM RATINGS
Symbol VDS VGS ID at TC=25°C ID at TC=100°C IDM PD at TC=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Rating 60 ± 25 35 22 120 31.3 -55 to 150 -55 to 150 Units V V A A A W °C °C Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 4 62 Units °C/W °C/W Ordering Information AP9972GI-HF-3TB RoHS-compliant, halogen-free TO-220CFM, shipped in tubes ©2010 Advanced Power Electronics Corp. USA 200510051-3 1/5 Advanced Power Electronics Corp. ELECTRICAL SPECIFICATIONS
at Tj=25°C (unless otherwise specified) Symbol BVDSS Parameter Drain-Source Breakdown Voltage 2 AP9972GI-HF-3 Test Conditions VGS=0V, ID=250uA Min.