Advanced Power Electronics AP9972GR-HF
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
| Part No. | AP9972GR-HF |
|---|---|
| Datasheet | AP9972GR-HF Download |
| Manufacturer |  Advanced Power Electronics |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
AP9972 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. G DS TO-262(R) Absolute Symbol Maximum RatingPsa@ramTejt=er25o.C(unless otherwise specified) Rating Units VDS Drain-Source Voltage VGS Gate-Source Voltage 60 V +25 V ID@TC=25℃ ID@TC=100℃ IDM Drain Current, VGS @ 10V Drain Current, VGS @ 10V Pulsed Drain Current1 60 A 38 A 230 A PD@TC=25℃ EAS IAR TSTG TJ Total Power Dissipation Single Pulse Avalanche Energy3 Avalanche Current3 Storage Temperature Range Operating Junction Temperature Range 89 45 30 -55 to 150 -55 to 150 W mJ A ℃ ℃ Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice Value 1.4 62 Units ℃/W ℃/W 1 201408284 AP9972GR-HFELECTRICAL CHARACTERISTICS
@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min.
