DESCRIPTION
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. G D S TO-263 (S) G ABSOLUTE MAXIMUM RATINGS
Symbol VDS VGS ID at TA=25°C ID at TA=100°C IDM PD at TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 D S TO-220 (P) Rating 60 +20 14 9 40 27 0.22 -55 to 150 -55 to 150 Units V V A A A W W/ °C °C °C Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 4.5 62 Unit °C/W °C/W Ordering Information AP9973GS-3TR AP9973GP-3TB RoHS-compliant TO-263 shipped on tape and reel (800 pcs/reel) RoHS-compliant TO-220 shipped in tubes ©2009 Advanced Power Electronics Corp. USA 200703142-3 1/6 Advanced Power Electronics Corp.