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AP9974GP Datasheet PDF

Advanced Power Electronics AP9974GP

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters.
Part No. AP9974GP
Datasheet AP9974GP Download
Manufacturer
Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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AP9974GP datasheet page 1 preview

DESCRIPTION

The through-hole version (AP9974GP) are available for low-profile applications. G D G D S TO-263(S) TO-220(P) S Rating 60 ±20 72 46 300 104 0.8 Units V V A A A W W/ ℃ ℃ ℃

ABSOLUTE MAXIMUM RATINGS

Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 1.2 62 Units ℃/W ℃/W Data and specifications subject to change without notice 200318051 AP9974GS/P

ELECTRICAL CHARACTERISTICS

@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=250uA Min. 60 1 - Typ. 0.07 50 43 8 31 14 48 42 67 495 460 1 Max.
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