AP9995GH-HF Datasheet PDF | Advanced Power Electronics

Advanced Power Electronics AP9995GH-HF

The Advanced Power MOSFETs from APEC provide the best combination of fast switching, ruggedized device design, low ondesigner with the best combination of fast switching, resistance and cost-effectiveness. The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.

Part No.	AP9995GH-HF
Datasheet	AP9995GH-HF Download
Manufacturer	Advanced Power Electronics
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Buy	Stock & Price

DESCRIPTION

Advanced Power MOSFETs from APEC provide the designer with the ruggedized device design, low on-resistance and cost-effectiveness. The through-hole version (AP9995GJ) is available for low-profile applications. G D S TO-251(J) G D S TO-252(H)

ABSOLUTE MAXIMUM RATINGS

Symbol VDS VGS ID@Tc=25℃ ID@Tc=100℃ IDM PD@Tc=25℃ PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 90 +20 7 4.4 15 20.8 Units V V A A A W W ℃ ℃ Total Power Dissipation Total Power Dissipation 3 2 -55 to 150 -55 to 150 Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount) 3 Value 6.0 62.5 110 Units ℃/W ℃/W ℃/W 1 201108171 Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice Free Datasheet...