DESCRIPTION
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. G D TO-220 (P) S ABSOLUTE MAXIMUM RATINGS
Symbol VDS VGS ID at TC=25°C ID at TC=100°C IDM PD at TC=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Rating 100 ±20 11 7 30 34.7 -55 to 150 -55 to 150 Units V V A A A W °C °C Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maixmum Thermal Resistance, Junction-ambient Value 3.6 62 Units °C/W °C/W Ordering Information AP9997GP-HF-3TB RoHS-compliant, halogen-free TO-220, shipped in tubes ©2010 Advanced Power Electronics Corp. USA 200812242-3 1/5 Advanced Power Electronics Corp. ELECTRICAL SPECIFICATIONS
at Tj=25°C (unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGS...