APEHT-0103 - High Temperature Silicon Carbide Schottky Diode

Datasheet Summary

Features

High temperature: Tc(max) = 225 C 1200 V / 10 A / 64 nC Tj(max) = 225 C.
AS9100:Rev. C-certified manufacturing, traceable throughout value chain.
Near zero forward and reverse recovery.
Extremely fast switching.
High system efficiency.
Hermetic seal; flux free, void free packaging.
Backside isolation.
High reliability.

APEHT-0103 High Temperature Silicon Carbide Schottky Diode by APEI - Datasheet Preview — Datasheet preview – APEHT-0103

Datasheet Details

Part number	APEHT-0103
Manufacturer	APEI
File Size	396.28 KB
Description	High Temperature Silicon Carbide Schottky Diode
Datasheet	APEHT-0103 Datasheet
Additional preview pages of the APEHT-0103 datasheet.

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Full PDF Text Transcription

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PRELIMINARY APE HT-0103 High Temperature Silicon Carbide Schottky Diode FEATURES  High temperature: Tc(max) = 225 C 1200 V / 10 A / 64 nC Tj(max) = 225 C  AS9100:Rev.

Published: Feb 10, 2017 |