• Part: APEHT-0103
  • Description: High Temperature Silicon Carbide Schottky Diode
  • Category: Diode
  • Manufacturer: APEI
  • Size: 396.28 KB
Download APEHT-0103 Datasheet PDF
APEI
APEHT-0103
FEATURES - High temperature: Tc(max) = 225 C 1200 V / 10 A / 64 n C Tj(max) = 225 C - AS9100:Rev. C-certified manufacturing, traceable throughout value chain - Near zero forward and reverse recovery - Extremely fast switching - High system efficiency - Hermetic seal; flux free, void free packaging - Backside isolation - High reliability APPLICATIONS - Downhole tools - High efficiency converters - Motor drives - Aerospace: Military & mercial - Smart grid/grid-tie distributed generation TO-254 Package AK A Absolute Maximum Ratings1 (at Tj = 25 C unless otherwise stated) Symbol Parameter VRRM Repetitive peak reverse voltage Condition(s) VDC DC blocking voltage IF IFRM IFSM IF(max) Continuous forward current Repetitive peak forward surge current Non-repetitive peak forward surge current Non-repetitive peak forward current Ptot Power dissipation Tj Operating...