APEHT-0103 Description
PRELIMINARY APE HT-0103 High Temperature Silicon Carbide Schottky Diode.
APEHT-0103 Key Features
- High temperature: Tc(max) = 225 C
- AS9100:Rev. C-certified manufacturing, traceable throughout value chain
- Near zero forward and reverse recovery
- Extremely fast switching
- High system efficiency
- Hermetic seal; flux free, void free packaging
- Backside isolation
- High reliability