DESCRIPTION
AP100N10NF 100V N-Channel Enhancement Mode MOSFET GENERAL FEATURES
VDS = 100V ID =100A RDS(ON) < 5.5mΩ @ VGS=10V （Type：4.3mΩ） Application BLDC LED Backlighting Package Marking and Ordering Information Product ID Pack Marking AP100N10NF PDFN5*6-8L AP100N10NF XXX YYYY ABSOLUTE MAXIMUM RATINGS
(TC=25℃unless otherwise noted) Symbol Parameter VDSS VGSS Drain-Source Voltage Gate-Source Voltage ID@TC=25℃ Continuous Drain Current, VGS @ 10V1 ID@TC=100℃ IDM EAS IAS PD@TC=25℃ TJ TSTG RθJA RθJC Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current Single Pulsed Avalanche Energy Avalanche Current Power Dissipation Operating Junction Temperature Range Thermal Resistance Junction-Ambient 1 Thermal Resistance, Junction to Case Max. 100 ±20 100 68 417 245 42 24 -55 to 150 25 1.0 Qty(PCS) 5000 Units V V A A A mJ A W °C °C/W ℃/W AP100N10NF REV1.0 永源微電子科技有限公司 1 AP100N10NF 100V N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS
(TJ=25℃, unless otherwise noted) Symbol Parameter Te...
APM
