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AP10H03DF - 30V N+N-Channel Enhancement Mode MOSFET

Datasheet Summary

Description

The AP10H03DF uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Features

  • VDS = 30V ID =35A RDS(ON).

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Datasheet preview – AP10H03DF

Datasheet Details

Part number AP10H03DF
Manufacturer APM
File Size 1.28 MB
Description 30V N+N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AP10H03DF Datasheet
Additional preview pages of the AP10H03DF datasheet.

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Full PDF Text Transcription

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Description AP10H03DF 30V N+N-Channel Enhancement Mode MOSFET The AP10H03DF uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.
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