DESCRIPTION
AP10H03DF 30V N+N-Channel Enhancement Mode MOSFET GENERAL FEATURES
VDS = 30V ID =35A RDS(ON) <12mΩ @ VGS=10V (Type：10mΩ) Application Lithium battery protection Wireless impact Mobile phone fast charging Package Marking and Ordering Information Product ID Pack Marking AP10H03DF PDFN3*3-8L AP10H03DF XXX YYYY ABSOLUTE MAXIMUM RATINGS
(TA=25℃unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TC=25℃ ID@TC=75℃ IDM EAS Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 IAS PD@TA=25℃ Avalanche Current Total Power Dissipation4 TSTG Storage Temperature Range TJ Operating Junction Temperature Range RθJA Thermal Resistance Junction-Ambient 1 RθJC Thermal Resistance Junction-Case1 Rating 30 ±20 35 18 10 24.2 22 7 -55 to 150 -55 to 150 62 18 Qty(PCS) 5000 Units V V A A A mJ A W ℃ ℃ ℃/W ℃/W AP10H03DF RVE3.2 永源微電子科技有限公司 1 AP10H03DF 30V N+N-Channel Enhancement Mode MOSFET El...
APM
