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AP10P10SI - -100V P-Channel Enhancement Mode MOSFET

Datasheet Summary

Description

The AP10P10SI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Features

  • VDS = -100V ID =-10A RDS(ON).

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Datasheet preview – AP10P10SI

Datasheet Details

Part number AP10P10SI
Manufacturer APM
File Size 758.27 KB
Description -100V P-Channel Enhancement Mode MOSFET
Datasheet download datasheet AP10P10SI Datasheet
Additional preview pages of the AP10P10SI datasheet.

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Full PDF Text Transcription

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AP10P10SI -100V P-Channel Enhancement Mode MOSFET Description The AP10P10SI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.
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