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AP10P10SI Datasheet PDF

APM AP10P10SI

The AP10P10SI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.
Part No. AP10P10SI
Datasheet AP10P10SI Download
Manufacturer
APM
Description -100V P-Channel Enhancement Mode MOSFET
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AP10P10SI datasheet page 1 preview

DESCRIPTION

GENERAL FEATURES

VDS = -100V ID =-10A RDS(ON) <100mΩ @ VGS=10V (Type:85mΩ) Application Brushless motor Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack Marking AP10P10SI SOT89-3L AP10P10SI XXX YYYY

ABSOLUTE MAXIMUM RATINGS

(TC=25℃unless otherwise noted) Symbol Parameter Rating VDS Drain-Source Voltage -100 VGS ID@TC=25℃ ID@TC=100℃ IDM Gate-Source Voltage Continuous Drain Current, VGS @ -10V1 Continuous Drain Current, VGS @ -10V1 Pulsed Drain Current2 ±20 -10 -6.8 -60 EAS Single Pulse Avalanche Energy3 80 IAS Avalanche Current -20 PD@TC=25℃ TSTG Total Power Dissipation4 Storage Temperature Range 3.1 -55 to 150 TJ RθJA RθJC Operating Junction Temperature Range Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction-Case1 -55 to 150 85 2.6 Qty(PCS) 3000 Units V V A A A mJ A W ℃ ℃ ℃/W ℃/W AP10P10SI REV1.0 永源微電子科技有限公司 1 AP10P10SI -100V P-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS

(TJ =25 ℃, unless otherwise noted) Symbol Parameter Test Conditions Min.
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