AP110N03D
Description
The AP110N03D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.
30V N-Channel Enhancement Mode MOSFET
General Features
VDS = 30V ID =110 A RDS(ON) < 4mΩ @ VGS=10V
Application
Battery protection
Load switch Uninterruptible power supply
Package Marking and Ordering Information
Product ID
Pack
TO-252-3L
Marking AP110N03D XXX YYYY
Qty(PCS) 2500
Absolute Maximum Ratings (TC=25℃ unless otherwise specified)
Symbol
Parameter
Drain-Source Voltage
Gate-Source Voltage
ID@TC=25℃ ID@TC=100℃ ID@TA=25℃
Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1
ID@TA=70℃
Continuous Drain Current, VGS @ 10V1
IDM EAS
Pulsed Drain Current2 Single Pulse Avalanche Energy3
IAS PD@TC=25℃
Avalanche Current Total Power...
