DESCRIPTION
AP110N03D 30V N-Channel Enhancement Mode MOSFET GENERAL FEATURES
VDS = 30V ID =110 A RDS(ON) < 4mΩ @ VGS=10V Application Battery protection Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack AP110N03D TO-252-3L Marking AP110N03D XXX YYYY Qty(PCS) 2500 ABSOLUTE MAXIMUM RATINGS
(TC=25℃ unless otherwise specified) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TC=25℃ ID@TC=100℃ ID@TA=25℃ Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 ID@TA=70℃ Continuous Drain Current, VGS @ 10V1 IDM EAS Pulsed Drain Current2 Single Pulse Avalanche Energy3 IAS PD@TC=25℃ Avalanche Current Total Power Dissipation4 PD@TA=25℃ Total Power Dissipation4 TSTG Storage Temperature Range TJ Operating Junction Temperature Range RθJA Thermal Resistance Junction-Ambient 1 RθJA Thermal Resistance Junction-Ambient 1 (t ≤10s) RθJC Thermal Resistance Junction-Case1 Steady State 30...
APM
