AP110N03D - 30V N-Channel Enhancement Mode MOSFET

APM

General Description

The AP110N03D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Key Features

VDS = 30V ID =110 A RDS(ON) < 4mΩ @ VGS=10V.

📥 Download Datasheet

AP110N03D 30v n-channel enhancement mode mosfet by APM - Datasheet Preview

Datasheet Details

Part number	AP110N03D
Manufacturer	APM
File Size	1.96 MB
Description	30V N-Channel Enhancement Mode MOSFET
Datasheet	AP110N03D Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
AP1110	2.4 - 2.5 GHz Power Amplifier	RFIC
AP1115	0.6A LOW DROPOUT POSITIVE ADJUSTABLE OR FIXED-MODE REGULATOR	Diodes Incorporated
AP1115	0.6A Low Dropout Positive Adjustable or Fixed-Mode Regulator	Anachip
AP1116	0.5A Low Dropout Positive Adjustable or Fixed-Mode Regulator	Anachip
AP1117	1A Low Dropout Positive Adjustable or Fixed-Mode Regulator	Analog Technology

Other Datasheets by APM

Part Number	Description
AP100N02D	20V N-Channel Enhancement Mode MOSFET
AP100N03BD	30V N-Channel Enhancement Mode MOSFET
AP100N03D	30V N-Channel Enhancement Mode MOSFET
AP100N03P	30V N-Channel Enhancement Mode MOSFET
AP100N03T	30V N-Channel Enhancement Mode MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

Description The AP110N03D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.